|
Specifications |
| Manufacturer |
TOSHIBA |
| Type of transistor |
IGBT |
| Collector-emitter voltage |
1.2kV |
| Collector current |
35A |
| Power dissipation |
230W |
| Case |
TO3PN |
| Gate-emitter voltage |
±25V |
| Pulsed collector current |
80A |
| Mounting |
THT |
| Kind of package |
tube |
| Turn-on time |
0.3µs |
| Turn-off time |
0.6µs |
| Features of semiconductor devices |
integrated anti-parallel diode |
| |
|
Αισθητήρια
Hμιαγωγοί
DC-DC Converters
Καθαριστικά - Χημικά
