Specifications |
Manufacturer |
INFINEON TECHNOLOGIES |
Type of transistor |
IGBT |
Collector-emitter voltage |
1.2kV |
Collector current |
25A |
Power dissipation |
70W |
Case |
TO247-3 |
Gate-emitter voltage |
±30V |
Pulsed collector current |
60A |
Mounting |
THT |
Gate charge |
85nC |
Kind of package |
tube |
Turn-on time |
45ns |
Turn-off time |
240ns |
Semiconductor structure |
single transistor |
Features of semiconductor devices |
integrated anti-parallel diode |
Gross weight |
6.5 g |
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