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FET
: Module, single transistor, Uds 500V, Id 75A, SOT227B, 1.04kW
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Best viewed
FET - Transistor N-MOSFET 75V 80A 200W TO220AB
Final price:
2.52 €
What's New?
Transistor P-FET - Transistor P-MOSFET x2, unipolar, -60V, -3.9A, Idm -32A, 1.2W, SO8
Final price:
1.00 €
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Transistor N-MOSFET - Module, single transistor, Uds 500V, Id 75A, SOT227B, 1.04kW
Prod code:
35318
PDF
IXFN100N50P
Click to enlarge
Price:
39.75 €
VAT:
9.54 €
Final price with tax:
49.29 €
Amount:
Long delivery time
Long delivery time
Specifications
Manufacturer
IXYS
Type of module
transistor
Semiconductor structure
single transistor
Drain-source voltage
500V
Drain current
75A
Case
SOT227B
Power
1.04kW
Max. forward impulse current
250A
Gate-source voltage
±30V
Mounting
screw
Electrical mounting
screw
Polarisation
unipolar
On-state resistance
49mΩ
Operating temperature
55...150°C
Technology
HiPerFET™
Availability:
With order
Manufacturers
:
---
|
ADVANCED POWER ELECTRONICS
|
DIODES INCORPORATED
|
DIOTEC SEMICONDUCTOR
|
FAIRCHILD SEMICONDUCTOR
|
INFINEON TECHNOLOGIES
|
INTERNATIONAL RECTIFIER
|
IXYS
|
MICROCHIP TECHNOLOGY
|
NXP
|
ON SEMICONDUCTOR
|
RENESAS
|
ST MICROELECTRONICS
|
TAIWAN SEMICONDUCTOR
|
TEXAS INSTRUMENTS
|
TOSHIBA
|
VISHAY
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