Specifications |
Manufacturer |
IXYS |
Type of module |
transistor |
Semiconductor structure |
single transistor |
Drain-source voltage |
500V |
Drain current |
75A |
Case |
SOT227B |
Power |
1.04kW |
Max. forward impulse current |
250A |
Gate-source voltage |
±30V |
Mounting |
screw |
Electrical mounting |
screw |
Polarisation |
unipolar |
On-state resistance |
49mΩ |
Operating temperature |
55...150°C |
Technology |
HiPerFET™ |
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