Specifications |
Manufacturer |
IXYS |
Type of module |
MOSFET transistor |
Semiconductor structure |
single transistor |
Drain-source voltage |
75V |
Drain current |
480A |
Case |
SOT227B |
Electrical mounting |
screw |
Polarisation |
unipolar |
On-state resistance |
1.9mŮ |
Pulsed drain current |
1.5kA |
Power dissipation |
940W |
Technology |
GigaMOS™, HiPerFET™, TrenchT2™ |
Kind of channel |
enhanced |
Gate charge |
545nC |
Reverse recovery time |
150ns |
Gate-source voltage |
±30V |
Mechanical mounting |
screw |
Gross weight |
37.06 g |
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