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FET
: Module, single transistor, 40V, 660A, SOT227B, Ugs ±15V, screw
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Best viewed
FET - Transistor N-MOSFET 75V 80A 200W TO220AB
Final price:
2.52 €
What's New?
Transistor P-FET - Transistor P-MOSFET x2, unipolar, -60V, -3.9A, Idm -32A, 1.2W, SO8
Final price:
1.00 €
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FET - Module, single transistor, 40V, 660A, SOT227B, Ugs ±15V, screw
Prod code:
40467
IXTN660N04T4
Click to enlarge
Price:
31.13 €
VAT:
7.47 €
Final price with tax:
38.60 €
Amount:
Long delivery time
Long delivery time
Specifications
Manufacturer
IXYS
Type of module
MOSFET transistor
Semiconductor structure
single transistor
Drain-source voltage
40V
Drain current
660A
Case
SOT227B
Electrical mounting
screw
Polarisation
unipolar
On-state resistance
0.85m
Pulsed drain current
1.8kA
Power dissipation
1040W
Technology
TrenchT4
Kind of channel
enhanced
Gate charge
860nC
Reverse recovery time
60ns
Gate-source voltage
15V
Mechanical mounting
screw
Gross weight
37.07 g
Prepack information
Tube = 10 pcs
Availability:
With order
Manufacturers
:
---
|
ADVANCED POWER ELECTRONICS
|
DIODES INCORPORATED
|
DIOTEC SEMICONDUCTOR
|
FAIRCHILD SEMICONDUCTOR
|
INFINEON TECHNOLOGIES
|
INTERNATIONAL RECTIFIER
|
IXYS
|
MICROCHIP TECHNOLOGY
|
NXP
|
ON SEMICONDUCTOR
|
RENESAS
|
ST MICROELECTRONICS
|
TAIWAN SEMICONDUCTOR
|
TEXAS INSTRUMENTS
|
TOSHIBA
|
VISHAY
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