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  Catalog » Semiconductors » IGBT : IGBT half-bridge x2,thermistor, Urmax 1.2kV, Ic 50A, P 355W  [Log In
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Transistor  IGBT, 650V, 100A, 268W, TO247-4
Transistor IGBT, 650V, 100A, 268W, TO247-4
Final price: 8.53 €
     
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Igbt - Transistor  IGBT, 650V, 40A, 283W, TO3P
Igbt - Transistor IGBT, 650V, 40A, 283W, TO3P
Final price: 4.32 €
     
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Igbt - IGBT half-bridge x2,thermistor, Urmax 1.2kV, Ic 50A, P 355W

Prod code: 33021

F4-50R12KS4 PDF

F4-50R12KS4

Price:  187.13 €
VAT:  44.91 €
Final price with tax:  232.04 €
Amount:   
Warning Long delivery time
Specifications
Manufacturer INFINEON TECHNOLOGIES
Type of module IGBT
Semiconductor structure transistor/transistor
Topology IGBT half-bridge x2, thermistor
Off state voltage max. 1.2kV
Collector current 50A
Power 355W
Max. forward impulse current 100A
Case EconoPACK2
Application Inverter, H-bridge
Electrical mounting soldered
Mounting screw
Operating temperature 40...125°C
Gate - emitter voltage ±20V
 
Availability: With order
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Manufacturers--- | FAIRCHILD SEMICONDUCTOR | INFINEON TECHNOLOGIES | INTERNATIONAL RECTIFIER | IXYS | ON SEMICONDUCTOR | SEMIKRON | ST MICROELECTRONICS | TOSHIBA
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