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  Κατάλογος » Hμιαγωγοί » IGBT : IGBT half-bridge x2,thermistor, Urmax 1.2kV, Ic 50A, P 355W  [Είσοδος
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Igbt - Transistor  IGBT, 650V, 60A, 375W, TO3P
Igbt - Transistor IGBT, 650V, 60A, 375W, TO3P
Τελική: 5.94 €
     
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Igbt - Transistor  IGBT, 600V, 20A, 166W, TO220-3, single transistor
Igbt - Transistor IGBT, 600V, 20A, 166W, TO220-3, single transistor
Τελική: 4.98 €
     
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Igbt - IGBT half-bridge x2,thermistor, Urmax 1.2kV, Ic 50A, P 355W

Κωδικός: 33021

F4-50R12KS4 PDF

F4-50R12KS4

Τιμή χωρίς ΦΠΑ:  187.13 €
Αξία ΦΠΑ:  44.91 €
Τελική με ΦΠΑ:  232.04 €
Ποσότητα:   
Προειδοποίηση Μεγάλος χρόνος παράδοσης
Specifications
Manufacturer INFINEON TECHNOLOGIES
Type of module IGBT
Semiconductor structure transistor/transistor
Topology IGBT half-bridge x2, thermistor
Off state voltage max. 1.2kV
Collector current 50A
Power 355W
Max. forward impulse current 100A
Case EconoPACK2
Application Inverter, H-bridge
Electrical mounting soldered
Mounting screw
Operating temperature 40...125°C
Gate - emitter voltage ±20V
 
Διαθεσιμότητα: Με παραγγελία
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Κατασκευαστές--- | FAIRCHILD SEMICONDUCTOR | INFINEON TECHNOLOGIES | INTERNATIONAL RECTIFIER | IXYS | ON SEMICONDUCTOR | SEMIKRON | ST MICROELECTRONICS | TOSHIBA
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