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  Catalog » Semiconductors » IGBT : IGBT half-bridge, Urmax 600V, Ic 83A, P 379W, Ifsm 200A, soldered  [Log In
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Igbt - Transistor  IGBT, 600V, 16A, 140W, D2PAK
Igbt - Transistor IGBT, 600V, 16A, 140W, D2PAK
Final price: 3.62 €
     
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Igbt - Transistor  IGBT, 650V, 60A, 250W, TO247, Eoff  1.17mJ, Eon  2.42mJ
Igbt - Transistor IGBT, 650V, 60A, 250W, TO247, Eoff 1.17mJ, Eon 2.42mJ
Final price: 6.18 €
     
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Igbt - IGBT half-bridge, Urmax 600V, Ic 83A, P 379W, Ifsm 200A, soldered

Prod code: 33059

PSI130/06 PDF

PSI130/06

Price:  41.47 €
VAT:  9.95 €
Final price with tax:  51.42 €
Amount:   
Warning Long delivery time
Specifications
Manufacturer POWERSEM
Type of module IGBT
Semiconductor structure transistor/transistor
Topology IGBT half-bridge
Off state voltage max. 600V
Collector current 83A
Power 379W
Max. forward impulse current 200A
Case ECO-PAC 2
Electrical mounting soldered
Mounting screw
Operating temperature 40...150°C
Gate - emitter voltage ±20V
 
Availability: With order
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Manufacturers--- | FAIRCHILD SEMICONDUCTOR | INFINEON TECHNOLOGIES | INTERNATIONAL RECTIFIER | IXYS | ON SEMICONDUCTOR | SEMIKRON | ST MICROELECTRONICS | TOSHIBA
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