Specifications |
Manufacturer |
INFINEON TECHNOLOGIES |
Type of module |
IGBT |
Semiconductor structure |
transistor/transistor |
Topology |
IGBT half-bridge |
Off state voltage max. |
600V |
Collector current |
50A |
Power |
280W |
Max. forward impulse current |
100A |
Case |
AG-34MM-1 |
Electrical mounting |
screw |
Mounting |
screw |
Operating temperature |
40...125°C |
Gate - emitter voltage |
±20V |
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