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  Catalog » Semiconductors » IGBT : IGBT half-bridge, Urmax 1.2kV, Ic 200A, P 1.1kW, Ifsm 400A, screw  [Log In] 
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Igbt - Transistor IGBT, bipolar, 600V, 40A, 170W, PG-TO220-3, Series H3
Igbt - Transistor IGBT, bipolar, 600V, 40A, 170W, PG-TO220-3, Series H3
Final price: 4.14 €
     
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Igbt - Transistor IGBT, 600V, 75A, 428W, TO247-3, single transistor
Igbt - Transistor IGBT, 600V, 75A, 428W, TO247-3, single transistor
Final price: 11.82 €
     
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Igbt - IGBT half-bridge, Urmax 1.2kV, Ic 200A, P 1.1kW, Ifsm 400A, screw

Prod code: 33027
FF200R12KT4 PDF

FF200R12KT4
Price:  172.38 €
VAT:  41.37 €
Final price with tax:  213.75 €
Amount:   
Usually shipped within 2-3 business days.
Specifications
Manufacturer INFINEON TECHNOLOGIES
Type of module IGBT
Semiconductor structure transistor/transistor
Topology IGBT half-bridge
Off state voltage max. 1.2kV
Collector current 200A
Power 1.1kW
Max. forward impulse current 400A
Case AG-62MM-1
Electrical mounting soldered, screw
Mounting screw
Operating temperature 40...150°C
Gate - emitter voltage ±20V
 
Availability: With order
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Manufacturers: --- | FAIRCHILD SEMICONDUCTOR | INFINEON TECHNOLOGIES | INTERNATIONAL RECTIFIER | IXYS | ON SEMICONDUCTOR | SEMIKRON | ST MICROELECTRONICS | TOSHIBA
  Sunday 30 June, 2024     119646174 requests since Saturday 23 January, 2010  
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