|
Specifications |
| Manufacturer |
INFINEON TECHNOLOGIES |
| Type of module |
IGBT |
| Semiconductor structure |
transistor/transistor |
| Topology |
IGBT half-bridge |
| Off state voltage max. |
1.2kV |
| Collector current |
200A |
| Power |
1.1kW |
| Max. forward impulse current |
400A |
| Case |
AG-62MM-1 |
| Electrical mounting |
soldered, screw |
| Mounting |
screw |
| Operating temperature |
40...150°C |
| Gate - emitter voltage |
±20V |
| |
|
Relays
Semiconductors
DC-DC Converters
Chemical sprays
