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  Κατάλογος » Hμιαγωγοί » IGBT : IGBT half-bridge, Urmax 1.2kV, Ic 200A, P 1.1kW, Ifsm 400A, screw  [Είσοδος
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Igbt - Transistor  IGBT, bipolar, 650V, 42A, 125W, PG-TO220-3, Series  F5
Igbt - Transistor IGBT, bipolar, 650V, 42A, 125W, PG-TO220-3, Series F5
Τελική: 3.70 €
     
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Igbt - Transistor  IGBT, 650V, 60A, 166W, TO247, Eoff  1.17mJ, Eon  2.36mJ
Igbt - Transistor IGBT, 650V, 60A, 166W, TO247, Eoff 1.17mJ, Eon 2.36mJ
Τελική: 4.30 €
     
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Igbt - IGBT half-bridge, Urmax 1.2kV, Ic 200A, P 1.1kW, Ifsm 400A, screw

Κωδικός: 33027

FF200R12KT4 PDF

FF200R12KT4

Τιμή χωρίς ΦΠΑ:  181.66 €
Αξία ΦΠΑ:  43.60 €
Τελική με ΦΠΑ:  225.26 €
Ποσότητα:   
* Αποστολή σε 2-3 εργάσιμες ημέρες.
Specifications
Manufacturer INFINEON TECHNOLOGIES
Type of module IGBT
Semiconductor structure transistor/transistor
Topology IGBT half-bridge
Off state voltage max. 1.2kV
Collector current 200A
Power 1.1kW
Max. forward impulse current 400A
Case AG-62MM-1
Electrical mounting soldered, screw
Mounting screw
Operating temperature 40...150°C
Gate - emitter voltage ±20V
 
Διαθεσιμότητα: Με παραγγελία
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Κατασκευαστές--- | FAIRCHILD SEMICONDUCTOR | INFINEON TECHNOLOGIES | INTERNATIONAL RECTIFIER | IXYS | ON SEMICONDUCTOR | SEMIKRON | ST MICROELECTRONICS | TOSHIBA
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