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IGBT
: H-bridge, Urmax 600V, Ic 29A, P 130W, Ifsm 60A, ECO-PAC 2, screw
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Igbt - Transistor IGBT, bipolar, 600V, 40A, 170W, PG-TO220-3, Series H3
Final price:
4.14 €
What's New?
Igbt - Transistor IGBT, 600V, 75A, 428W, TO247-3, single transistor
Final price:
11.82 €
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Igbt - H-bridge, Urmax 600V, Ic 29A, P 130W, Ifsm 60A, ECO-PAC 2, screw
Prod code:
33056
PDF
PSHI50D/06
Click to enlarge
Price:
35.54 €
VAT:
8.53 €
Final price with tax:
44.08 €
Amount:
Long delivery time
Long delivery time
Specifications
Manufacturer
POWERSEM
Type of module
IGBT
Semiconductor structure
diode/transistor
Topology
H-bridge
Off state voltage max.
600V
Collector current
29A
Power
130W
Max. forward impulse current
60A
Case
ECO-PAC 2
Application
H-bridge
Electrical mounting
soldered
Mounting
screw
Operating temperature
40...150°C
Gate - emitter voltage
±20V
Availability:
With order
Manufacturers
:
---
|
FAIRCHILD SEMICONDUCTOR
|
INFINEON TECHNOLOGIES
|
INTERNATIONAL RECTIFIER
|
IXYS
|
ON SEMICONDUCTOR
|
SEMIKRON
|
ST MICROELECTRONICS
|
TOSHIBA
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