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  Catalog » Semiconductors » IGBT : H-bridge, Urmax 1.2kV, Ic 33A, P 208W, Ifsm 50A, ECO-PAC 2, screw  [Log In
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Transistor  IGBT, 650V, 100A, 268W, TO247-4
Transistor IGBT, 650V, 100A, 268W, TO247-4
Final price: 8.53 €
     
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Igbt - Transistor  IGBT, 650V, 60A, 250W, TO247, Eoff  1.3mJ, Eon  2.6mJ
Igbt - Transistor IGBT, 650V, 60A, 250W, TO247, Eoff 1.3mJ, Eon 2.6mJ
Final price: 6.20 €
     
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Igbt - H-bridge, Urmax 1.2kV, Ic 33A, P 208W, Ifsm 50A, ECO-PAC 2, screw

Prod code: 33057

PSHI50D/12 PDF

PSHI50D/12

Price:  34.81 €
VAT:  8.35 €
Final price with tax:  43.16 €
Amount:   
Warning Long delivery time
Specifications
Manufacturer POWERSEM
Type of module IGBT
Semiconductor structure diode/transistor
Topology H-bridge
Off state voltage max. 1.2kV
Collector current 33A
Power 208W
Max. forward impulse current 50A
Case ECO-PAC 2
Application H-bridge
Electrical mounting soldered
Mounting screw
Operating temperature 40...150°C
Gate - emitter voltage ±20V
 
Availability: With order
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Manufacturers--- | FAIRCHILD SEMICONDUCTOR | INFINEON TECHNOLOGIES | INTERNATIONAL RECTIFIER | IXYS | ON SEMICONDUCTOR | SEMIKRON | ST MICROELECTRONICS | TOSHIBA
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